n-ch p-ch v dss 55v -55v r ds(on) 0.050 w 0.105 w hexfet ? power mosfet fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. 2/24/99 so-8 l generation v technology l ultra low on-resistance l dual n and p channel mosfet l surface mount l fully avalanche rated irf7343 description d1 n-channel mosfet p-channel mosfet d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 max. n-channel p-channel units v ds drain-source voltage 55 -55 v i d @ t a = 25c continuous drain current, v gs @ 10v 4.7 -3.4 i d @ t a = 70c continuous drain current, v gs @ 10v 3.8 -2.7 i dm pulsed drain current ? 38 -27 p d @t a = 25c maximum power dissipation ? 2.0 w p d @t a = 70c maximum power dissipation ? 1.3 w e as single pulse avalanche energy ? 72 114 mj i ar avalanche current 4.7 -3.4 a e ar repetitive avalanche energy 0.20 mj v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ? 5.0 -5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c parameter a absolute maximum ratings parameter typ. max. units r q ja maximum junction-to-ambient ? CCC 62.5 c/w thermal resistance www.irf.com 1 pd -91709
irf7343 2 www.irf.com ? surface mounted on fr-4 board, t 10sec. parameter min. typ. max. units conditions n-ch 55 v gs = 0v, i d = 250a p-ch -55 v gs = 0v, i d = -250a n-ch 0.059 reference to 25c, i d = 1ma p-ch 0.054 reference to 25c, i d = -1ma 0.043 0.050 v gs = 10v, i d = 4.7a ? 0.056 0.065 v gs = 4.5v, i d = 3.8a ? 0.095 0.105 v gs = -10v, i d = -3.4a ? 0.150 0.170 v gs = -4.5v, i d = -2.7a ? n-ch 1.0 v ds = v gs , i d = 250a p-ch -1.0 v ds = v gs , i d = -250a n-ch 7.9 v ds = 10v, i d = 4.5a ? p-ch 3.3 v ds = -10v, i d = -3.1a ? n-ch 2.0 v ds = 55v, v gs = 0v p-ch -2.0 v ds = -55v, v gs = 0v n-ch 25 v ds = 55v, v gs = 0v, t j = 55c p-ch -25 v ds = -55v, v gs = 0v, t j = 55c i gss gate-to-source forward leakage n-p CC 100 v gs = 20v n-ch 24 36 p-ch 26 38 n-ch 2.3 3.4 p-ch 3.0 4.5 n-ch 7.0 10 p-ch 8.4 13 n-ch 8.3 12 p-ch 14 22 n-ch 3.2 4.8 p-ch 10 15 n-ch 32 48 p-ch 43 64 n-ch 13 20 p-ch 22 32 n-ch 740 p-ch 690 n-ch 190 pf p-ch 210 n-ch 71 p-ch 86 v (br)dss drain-to-source breakdown voltage d v (br)dss / d t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs(th) gate threshold voltage g fs forward transconductance i dss drain-to-source leakage current q g total gate charge q gs gate-to-source charge q gd gate-to-drain ("miller") charge t d(on) turn-on delay time t r rise time t d(off) turn-off delay time t f fall time c iss input capacitance c oss output capacitance c rss reverse transfer capacitance electrical characteristics @ t j = 25c (unless otherwise specified) v v/c w v s a nc ns n-channel i d = 4.5a, v ds = 44v, v gs = 10v ? p-channel i d = -3.1a, v ds = -44v, v gs = -10v n-channel v dd = 28v, i d = 1.0a, r g = 6.0 w, r d = 16 w ? p-channel v dd = -28v, i d = -1.0a, r g = 6.0 w , r d = 16 w n-channel v gs = 0v, v ds = 25v, ? = 1.0mhz p-channel v gs = 0v, v ds = -25v, ? = 1.0mhz n-ch p-ch parameter min. typ. max. units conditions n-ch 2.0 p-ch -2.0 n-ch 38 p-ch -27 n-ch 0.70 1.2 t j = 25c, i s = 2.0a, v gs = 0v ? p-ch -0.80 -1.2 t j = 25c, i s = -2.0a, v gs = 0v ? n-ch 60 90 p-ch 54 80 n-ch 120 170 p-ch 85 130 source-drain ratings and characteristics i s continuous source current (body diode) i sm pulsed source current (body diode) ? v sd diode forward voltage t rr reverse recovery time q rr reverse recovery charge a v ns nc n-channel t j = 25c, i f =2.0a, di/dt = 100a/s p-channel ? t j = 25c, i f = -2.0a, di/dt = 100a/s ? n-channel i sd 4.7a, di/dt 220a/s, v dd v (br)dss , t j 150c p-channel i sd -3.4a, di/dt -150a/s, v dd v (br)dss , t j 150c ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 22 ) notes: ? pulse width 300s; duty cycle 2%. ? n-channel starting t j = 25c, l = 6.5mh r g = 25 w , i as = 4.7a. p-channel starting t j = 25c, l = 20mh r g = 25 w , i as = -3.4a. na
irf7343 www.irf.com 3 1 10 100 3 4 5 6 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. typical source-drain diode forward voltage n-channel 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 4.5v 4.5v 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j
irf7343 4 www.irf.com 0 10 20 30 40 0.040 0.060 0.080 0.100 0.120 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v fig 5. normalized on-resistance vs. temperature fig 8. maximum avalanche energy vs. drain current fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage n-channel ( w ) r ds(on) , drain-to-source on resistance ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.7a 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.1a 3.8a 4.7a 0.04 0.06 0.08 0.10 0.12 0246810 a gs v , gate-to-source voltage (v) i = 4.7a d
irf7343 www.irf.com 5 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage n-channel 0 10 20 30 40 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 4.5a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irf7343 6 www.irf.com 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v fig 14. typical transfer characteristics fig 13. typical output characteristics fig 12. typical output characteristics fig 15. typical source-drain diode forward voltage p-channel 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -3.0v 1 10 100 3 4 5 6 7 v = -25v 20s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j -4.5v -4.5v
irf7343 www.irf.com 7 fig 16. normalized on-resistance vs. temperature fig 19. maximum avalanche energy vs. drain current fig 17. typical on-resistance vs. drain current fig 18. typical on-resistance vs. gate voltage p-channel 0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 25 50 75 100 125 150 0 50 100 150 200 250 300 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a r ds(on) , drain-to-source on resistance ( w ) 0.05 0.15 0.25 0.35 0.45 2581114 a gs -v , gate-to-source voltage (v) i = -3.4 a d
irf7343 8 www.irf.com 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds fig 21. typical gate charge vs. gate-to-source voltage fig 20. typical capacitance vs. drain-to-source voltage p-channel fig 22. maximum effective transient thermal impedance, junction-to-ambient - 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss
irf7343 www.irf.com 9 package outline so8 outline so8 part marking information example : this is an irf7101 date code (yww ) y = last digit of the year w w = week w afer lot code (last 4 digits) xxxx bottom part number top international rectifier logo f7101 312 k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inches millimeters min max min max a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are shown in millimeters (inches). 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1
irf7343 10 www.irf.com so8 dimensions are shown in millimeters (inches) tape & reel information 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 2/99
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